II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap semiconductors, today announced that it has qualified its 1200 V silicon carbide MOSFET platform, on its high-quality SiC substrates, to stringent automotive standard requirements and is expanding its relationship with GE by signing a three-year technology access agreement (TAA) with GE Research to gain access to the Lab’s world-class SiC module technology and team of experts to accelerate customer design-in engagement activities.
We are pleased to introduce the new generation of Wolfspeed® TM 1700V Silicon Carbide (SiC) Schottky Diodes in die form. This latest family incorporates advanced 5th. generation technology from our 150mm production facilities. In conjunction with our SiC MOSFETs we bring the most comprehensive 1700V portfolio in our industry, to enable high efficiency and power density. This newer CPW5 series 1700V family is intended to eventually supersede our original CPW3 1700V diodes 10A and 25A. These devices are ideal for solar power applications with an operating voltage of 1500V. When used as a boost diode they enable faster switching and lower losses.
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